Atic representations of your multilayer structure in the PZT and PMN-PT samples, respectively. (c,d) Correspond to cross-section SEM secondary electron pictures making use of the In-Lens detector. In-Lens detector.two.three. Calibration Technique SMM experiments consist in measuring the sample’s impedance a measureSMM experiments consist in measuring the sample’s impedance by means of through a ment of your reflectionFmoc-Gly-Gly-OH In Vitro reflection coefficientthe ratio of theratio of your reflected to the incident measurement in the coefficient provided by given by the reflected for the incident microwave signals. Nevertheless, the usage of an impedance impedance matching circuit AFM probe microwave signals. Nevertheless, the usage of an matching circuit between thebetween the along with the vector network analyser induces three experimental error terms (e error e11 ). (e00, AFM probe and the vector network analyser induces three experimental 00 , e01 ,termsThis creates deviation between the actual along with the measured plus the measured reflection e01, e11).a This creates a deviation involving the actualreflection coefficients. A calibration process applying reference samples (here A61, A64 structures from MC2 technologies) coefficients. A calibration process working with reference samples (here A61, A64 structures is necessary to right for the induced experimental errors. A modified quick open load (mSOL) calibration process is made use of to this finish [33]. The technique applies the classical oneport VNA calibration employing three known capacitance requirements (triplet) to ascertain the three experimental error terms. These requirements are established from reference capacitor triplet chosen on the MC2 samples A61 or A64 [32]. The triplet capacitance standards are FAUC 365 medchemexpress selected around the thickest SiO2 layer (4th plateau) of 1 reference sample. This reduces considerably the combined uncertainty level to three (k = 1) resulting from the depletionNanomaterials 2021, 11,4 ofcapacitance in the SiO2 /Si interface also because the observed parasitic series capacitances [32]. The error terms are discovered by means of a comparison between the measured SMM values and also a thorough numerical modelling of your typical micro-capacitor structures (see Section 3.1). The actual reflection coefficient S11 is associated with the measured S11,m by: S11 = S11,m – e00 . e01 e11 (S11,m – e00 ) (1)The impedance from the sample follows as: Zs = Z0 1 S11 , 1 – S11 (two)with Z0 = 50 is a reference impedance. The measured capacitance from the sample is determined at the selected frequency with the microwave measurement. 2.4. Measurement Protocol In SMM, maps of S11,m are recorded by scanning the conductive AFM tip in contact using the sample across a provided location. The S11,m images are processed making use of a differential strategy in which S11,m = S11,m – S’11,m is determined for each scanning line. S11,m corresponds towards the distinction among the raw S11,m signals measured on individual capacitors Ci plus the S’11,m signals measured around the dielectric layer surrounding the capacitor. This strategy is intended to exclude the background capacitive signal, thus lowering stray capacitances involved inside the measurement [32]. Additionally, the sample configuration is developed such that the investigated samples are placed inside the quick vicinity of the reference sample as previously reported in [29,32]. That is especially intended to prevent big variations inside the nearby electromagnetic environment of measured samples. Calibration measurements are initially conducted around the regular SiO2 micro-capacitors.